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[ Free Kannada Books Online · Latest Book By Kannada Asstt. Books For Free · Kannada Books at Myreena [MYP] .1. Field of the Invention
The present invention relates to a MOS type semiconductor device and, more particularly, to an improved metal gate MOS device.
2. Description of the Related Art
One type of semiconductor device is a metal gate metal oxide semiconductor field effect transistor (MOSFET) which has a gate metal layer that is electrically insulated from the underlying semiconductor substrate by a thin gate oxide layer. Such transistors, which are formed in a lightly doped substrate, are well suited for dynamic random access memory (DRAM) applications. Other types of MOSFETs used in DRAM applications include p type MOSFETs and n type MOSFETs.
FIG. 1 illustrates a typical prior art metal gate MOSFET 100. The metal gate MOSFET has a p type substrate 102. An n+ drain region 104 is formed in a surface area of the p type substrate 102 that is under the gate metal layer 108. A p+ region 106 is formed in a surface area of the p type substrate 102 that is between the gate metal layer 108 and the drain region 104. A drain contact structure 120 and a gate contact structure 122 are formed in the n+ drain region 104 and the p+ region 106 respectively.
The drain contact structure 120 includes a drain metal layer 114, a
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